IRGIB6B60KDPBF Ver la hoja de datos (PDF) - International Rectifier
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IRGIB6B60KDPBF
International Rectifier
IRGIB6B60KDPBF Datasheet PDF : 12 Pages
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IRGIB6B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
Collector-to-Emitter Voltage
1.50 1.80 2.20 V IC = 5A, VGE = 15V, TJ = 25°C
— 2.20 2.50
IC = 5A, VGE = 15V, TJ = 150°C
— 2.30 2.60
IC = 5A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
gfe
Forward Transconductance
— 3.0 — S VCE = 50V, IC = 5.0A, PW = 80µs
ICES
Zero Gate Voltage Collector Current
— 1.0 150 µA VGE = 0V, VCE = 600V
— 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
— 720 1100
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
— 1.25 1.45 V IF = 5.0A, VGE = 0V
— 1.20 1.40
IF = 5.0A, VGE = 0V, TJ = 150°C
— 1.15 1.35
IF = 5.0A, VGE = 0V, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
— 18.2 27.3
IC = 5.0A
Qge
Gate-to-Emitter Charge (turn-on)
— 1.9 2.85 nC VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
— 9.2 13.8
VGE = 15V
Eon
Turn-On Switching Loss
— 110 210
IC = 5.0A, VCC = 400V
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
—
—
135
245
245
455
d µJ VGE = 15V, RG = 100Ω, L = 1.4mH
Ls= 150nH, TJ = 25°C
td(on)
Turn-On delay time
— 25 34
IC = 5.0A, VCC = 400V
tr
Rise time
— 17 26 ns VGE = 15V, RG = 100Ω, L = 1.4mH
td(off)
Turn-Off delay time
— 215 230
Ls= 150nH, TJ = 25°C
tf
Fall time
— 13.2 22
Eon
Turn-On Switching Loss
— 150 260
IC = 5.0A, VCC = 400V
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
—
—
190
340
300
560
d µJ VGE = 15V, RG = 100Ω, L = 1.4mH
Ls= 150nH, TJ = 150°C
td(on)
Turn-On delay time
— 28 37
IC = 5.0A, VCC = 400V
tr
Rise time
— 17 26 ns VGE = 15V, RG = 100Ω, L = 1.4mH
td(off)
Turn-Off delay time
— 240 255
Ls= 150nH, TJ = 150°C
tf
Fall time
— 18 27
LE
Internal Emitter Inductance
— 7.5 — nH Measured 5 mm from package
Cies
Input Capacitance
— 290 435
VGE = 0V
Coes
Output Capacitance
— 34 51 pF VCC = 30V
Cres
Reverse Transfer Capacitance
— 10 15
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 18A, Vp = 600V
SCSOA
Short Circuit Safe Operating Area
VCC=500V,VGE = +15V to 0V,RG = 100Ω
10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω
VCC=360V,VGE = +15V to 0V
ISC (PEAK)
Peak Short Circuit Collector Current
— 50 — A
Erec
Reverse Recovery Energy of the Diode — 90 175 µJ TJ = 150°C
trr
Diode Reverse Recovery Time
— 70 91 ns VCC = 400V, IF = 5.0A, L = 1.4mH
Irr
Peak Reverse Recovery Current
— 10 13 A VGE = 15V, RG = 100Ω, Ls= 150nH
Qrr
Diode Reverse Recovery Charge
— 350 455 nC di/dt = 400A/µs
Ref.Fig.
5,6,7
9,10,11
9,10,11
12
8
Ref.Fig.
23
CT1
CT4
CT4
CT4
13,15
WF1,WF2
14,16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
WF4
17,18,19
20,21
CT4,W F3
Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω.
Energy losses include "tail" and diode reverse recovery.
2
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