IRGIB6B60KDPBF Ver la hoja de datos (PDF) - International Rectifier

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IRGIB6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRGIB6B60KDPbF

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 1.157 0.000607

τ3 τ3

1.134 0.107781

1.608 1.9249

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

10

100

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

0.01

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

0.001

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

R3R3 Ri (°C/W) τi (sec)

τCτ 2.530 0.001

τ3 τ3

1.354 0.068689

2.114 2.758

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1

10

100

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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