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IRGB10B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG/B/S/SL10B60KD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Ref.Fig.

V(BR)CES

∆V(BR)CES/∆TJ

VCE(on)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

VFM

IGES

Collector-to-Emitter Breakdown Voltage 600

Temperature Coeff. of Breakdown Voltage –––

Collector-to-Emitter Saturation Voltage 1.5

–––

Gate Threshold Voltage

3.5

Temperature Coeff. of Threshold Voltage –––

Forward Transconductance

–––

Zero Gate Voltage Collector Current –––

–––

Diode Forward Voltage Drop

–––

–––

Gate-to-Emitter Leakage Current

–––

––– ––– V

0.3 ––– V/°C

1.80 2.20

2.20 2.50 V

4.5 5.5 V

-10 ––– mV/°C

7.0 ––– S

3.0 150 µA

300 700

1.30 1.45

1.30 1.45 V

––– ±100 nA

VGE = 0V, IC = 500µA

VGE = 0V, IC = 1.0mA, (25°C-150°C)

IC = 10A, VGE = 15V

5, 6,7

IC = 10A, VGE = 15V TJ = 150°C 9,10,11

VCE = VGE, IC = 250µA

9,10,11

VCE = VGE, IC = 1.0mA, (25°C-150°C) 12

VCE = 50V, IC = 10A, PW=80µs

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 600V, TJ = 150°C

IC = 10A

8

IC = 10A TJ = 150°C

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

Eon

Eoff

Etot

td(on)

tr

td(off)

tf

Eon

Eoff

Etot

td(on)

tr

td(off)

tf

Cies

Coes

Cres

RBSOA

SCSOA

Erec

trr

Irr

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Reverse Bias Safe Operting Area

Short Circuit Safe Operting Area

Reverse Recovery energy of the diode

Diode Reverse Recovery time

Diode Peak Reverse Recovery Current

Min. Typ. Max.

––– 38 –––

––– 4.3 –––

––– 16.3 –––

––– 140 247

––– 250 360

––– 390 607

––– 30 39

––– 20 29

––– 230 262

––– 23 32

––– 230 340

––– 350 464

––– 580 804

––– 30 39

––– 20 28

––– 250 274

––– 26 34

––– 620 –––

––– 62 –––

––– 22 –––

FULL SQUARE

10 ––– –––

––– 245 330

––– 90 105

––– 19 22

Units

nC

µJ

ns

µJ

ns

pF

µs

µJ

ns

A

Conditions

IC = 10A

VCC = 400V

VGE = 15V

IC = 10A, VCC = 400V

VGE = 15V,RG = 47Ω, L = 200µH

Ls = 150nH

TJ = 25°C ƒ

IC = 10A, VCC = 400V

VGE = 15V, RG = 47Ω, L = 200µH

Ls = 150nH, TJ = 25°C

Ref.Fig.

CT1

CT4

CT4

IC = 10A, VCC = 400V

CT4

VGE = 15V,RG = 47Ω, L = 200µH

13,15

Ls = 150nH

TJ = 150°C ƒ WF1WF2

IC = 10A, VCC = 400V

14, 16

VGE = 15V, RG = 47Ω, L = 200µH

CT4

Ls = 150nH, TJ = 150°C

WF1

WF2

VGE = 0V

VCC = 30V

f = 1.0MHz

TJ = 150°C, IC = 44A, Vp =600V

4

VCC = 500V, VGE = +15V to 0V,RG = 47Ω CT2

TJ = 150°C, Vp =600V,RG = 47Ω

CT3

VCC = 360V, VGE = +15V to 0V

TJ = 150°C

VCC = 400V, IF = 10A, L = 200µH

VGE = 15V,RG = 47Ω, Ls = 150nH

WF4

17,18,19

20, 21

CT4,WF3

Note  to „ are on page 15

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