IRGB10B60KD Ver la hoja de datos (PDF) - International Rectifier

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IRGB10B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG/B/S/SL10B60KD

1

D = 0.50

0.20

0.1

0.10

0.05

0.01

0.02

0.01

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci= i/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 0.285

0.000134

τ3 τ3

0.241 0.000565

0.288 0.0083

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

t1 , Rectangular Pulse Duration (sec)

1E-1

1E+0

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.01

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci= i/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 0.846 0.000149

τ3 τ3

1.830 0.001575

1.143 0.027005

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

t1 , Rectangular Pulse Duration (sec)

1E-1

1E+0

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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