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M6MGT160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

DEVICE IDENTIFIER CODE

MITSUBISHI LSIs

M6MGB/T160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS

3.3V-ONLY FLASH MEMORY &

4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

Code

Pins

A0

DQ7

DQ6

DQ5 DQ4

DQ3

DQ2

DQ1

DQ0 Hex. Data

Manufacturer Code

VIL

0

0

0

1

1

1

0

0

Device Code (-T160S4BVP)

VIH

1

0

1

0

0

0

0

0

Device Code (-B160S4BVP)

VIH

1

0

1

0

0

0

0

1

In the word-wide mode, the upper data(D15-8) is "0".

1CH

A0H

A1H

ABSOLUTE MAXIMUM RATINGS

Symbol

F-Vcc

VI1

Ta

Tbs

Tstg

I OUT

Parameter

Flash Vcc voltage

All input or output voltage 1)

Ambient temperature

Temperature under bias

Storage temperature

Output short circuit current

Conditions

With respect to Ground

Min Max Unit

-0.2 4.6

V

-0.6 4.6

V

-20

85

°C

-50

95

°C

-65 125

°C

100

mA

1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage

on input/output pins is F-VCC+0.5V which, during transitions, may overshoot to F-VCC+1.5V for periods <20ns.

CAPACITANCE

Symbol

Parameter

CIN

COUT

Input capacitance (Address, Control Pins)

Output capacitance

Test conditions

Limits

Min Typ Max

Unit

Ta = 25°C, f = 1MHz, Vin = Vout = 0V

8

pF

12

pF

Note: The value of common pins to Flash Memory is the sum of Flash Memory and SRAM.

DC ELECTRICAL CHARACTERISTICS (Ta = -20~ 85°C, F-Vcc = 2.7V ~ 3.6V, unless otherwise noted)

Symbol

Parameter

Test conditions

Limits

Min Typ1) Max

Unit

ILI

Input leakage current

ILO

Output leakage current

ISB1

0V£VIN£F-VCC

0V£VOUT£F-VCC

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

±2.0

mA

±11

mA

50 200

mA

F-VCC standby current

ISB2

F-VCC = 3.6V, VIN=GND or F-VCC,

F-CE# = F-RP# = F-WP# = F-VCC±0.3V

0.1

5

mA

ISB3

F-VCC = 3.6V, VIN=VIL/VIH, F-RP# = VIL

F-VCC deep powerdown current

ISB4

F-VCC = 3.6V, VIN=GND or VCC, F-RP# =GND±0.3V

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = VIL, 5MHz

ICC1

F-VCC read current for Word or Byte F-RP#=OE#=VIH, IOUT = 0mA

1MHz

5

15

mA

0.1

5

mA

8

15

2

4

mA

ICC2

F-VCC Write current for Word or Byte

F-VCC = 3.6V,VIN=VIL/VIH, F-CE# =WE#= VIL,

F-RP#=OE#=VIH

15

mA

ICC3

F-VCC program current

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

35

mA

ICC4

F-VCC erase current

ICC5

F-VCC suspend current

VIL

Input low voltage

VIH

Input high voltage

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

– 0.5

2.0

35

mA

200

mA

0.8

V

F-Vcc+0.5

V

VOL

Output low voltage

IOL = 4.0mA

0.45

V

VOH1

VOH2

Output high voltage

IOH = –2.0mA

IOH = –100mA

0.85(F-Vcc)

V

F-Vcc–0.4

V

VLKO

Low VCC Lock-Out voltage 2)

1.5

2.2

V

All currents are in RMS unless otherwise noted.

1) Typical values at F-Vcc=3.3V, Ta=25°C

2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.

If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents

may occur.

10

Sep. 1999 , Rev.2.0

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