M6MGT160S4BVP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M6MGT160S4BVP
MITSUBISHI ELECTRIC
M6MGT160S4BVP Datasheet PDF : 30 Pages
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MITSUBISHI LSIs
M6MGB/T160S4BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
AC ELECTRICAL CHARACTERISTICS (Ta = -20 ~85°C)
Read-Only Mode
Limits
Symbol
Parameter
tRC
ta (AD)
ta (CE)
ta (OE)
tCLZ
tDF(CE)
tOLZ
tDF(OE)
tPHZ
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tPLQZ
Read cycle time
Address access time
Chip enable access time
Output enable access time
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
F-RP# low to output high-Z
ta(BYTE) tFL/HQV BYTE# access time
tBHZ tFLQZ BYTE# low to output high-Z
tOH
tOH Output hold from F-CE#, OE#, addresses
Speed Item: -90
Unit
F-Vcc=2.7~3.6V
Min
Typ
Max
90
ns
90
ns
90
ns
30
ns
0
ns
25
ns
0
ns
25
ns
150
ns
90
ns
25
ns
0
ns
tBCD tELFL/H F-CE# low to BYTE# high or low
5
ns
tBAD tAVFL/H Address to BYTE# high or low
5
ns
tOEH tWHGL OE# hold from WE# high
10
ns
tPS tPHEL F-RP# recovery to F-CE# low
150
ns
Timing measurements are made under AC waveforms for read operations.
AC ELECTRICAL CHARACTERISTICS (Ta = -20 ~85°C)
Write Mode (WE# control)
Limits
Symbol
Parameter
Speed Item: -90
F-Vcc=2.7~3.6V
Unit
Min
Typ
Max
tWC tAVAV Write cycle time
90
ns
tAS tAVWH Address set-up time
50
ns
tAH tWHAX Address hold time
0
ns
tDS tDVWH Data set-up time
50
ns
tDH tWHDX Data hold time
0
ns
tOEH tWHGL OE# hold from WE# high
10
ns
tRE -
Latency between Read and Write FFH or 71H
30
ns
tCS tELWL Chip enable set-up time
0
ns
tCH tWHEH Chip enable hold time
0
ns
tWP tWLWH Write pulse width
60
ns
tWPH tWHWL Write pulse width high
30
ns
tBS tFL/HWH Byte enable high or low set-up time
50
ns
tBH tWHFL/H Byte enable high or low hold time
90
ns
tGHWL tGHWL OE# hold to WE# Low
0
ns
tBLS tPHHWH Block Lock set-up to write enable high
90
ns
tBLH tQVPH Block Lockhold from valid SRD
0
ns
tDAP tWHRH1 Duration of auto-program operation
4
80
ms
tDAE tWHRH2 Duration of auto-block erase operation
40
600
ms
tWHRL tWHRL WE# high to RY/BY# low
90
ns
tPS tPHWL F-RP# high recovery to write enable low
150
ns
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at F-Vcc=3.3V, Ta=25°C
11
Sep. 1999 , Rev.2.0
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