PSB 4860
Electrical Characteristics
RAS
CAS0,CAS1
t1
t3
t2
t4
Figure 78 Memory Interface - DRAM Refresh Cycle
Parameter
Symbol Limit values
Unit
Memory Interface - DRAM Refresh Cycle
Min
Max
RAS precharge time
t1
100
ns
RAS low time
t2
200
5000 ns
CAS setup
t3
100
ns
CAS hold
t4
100
ns
Note: The frequency of the DRAM refresh cycle depends on the selected mode. In active
mode or normal refresh mode (during power down) the minimal frequency is 64
kHz. In battery backup mode, the refresh frequency is 8 kHz.
Semiconductor Group
239
10.97