RMWB12001 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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RMWB12001 Datasheet PDF : 6 Pages
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Figure 2. Chip Layout and Bond Pad Locations
0.11
0.48 0.73
2.03 2.24
1.70
1.60
1.70
1.60
1.42
0.69
0.10
0.00
0.0
Dimensions in mm 0
0.10
0.00
1.1
2.1 2.2
1
24
Chip Size is 2.24mm x 1.70mm X 100µm. Back of chip is RF and DC Ground.
Figure 3. Recommended Application Schematic Circuit Diagram
Drain Supply
Vd=4 V
Bond Wires
100 pF
10,000 pF
Output Power
Detector Voltage Vdet
3 kΩ
100 pF
100 pF
Bond Wires
MMIC Chip
RF IN
RF OUT
Bond Wires
100 pF
10,000 pF
Ground
(Back of Chip)
Gate
Supply Vg
Note:
Detector delivers > 0.1VDC into 3 kΩ load resistor for > +20 dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
©2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C
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