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RMWB12001

12 GHz Buffer Amplifier MMIC

Fairchild Semiconductor 

Die-Attach

80Au/20Sn

5mil Thick

Alumina

50Ω

Figure 4. Recommended Assembly Diagram

10,000pF

Drain Supply

Vd= 4 V

3kΩ

Output Power

Detector Voltage

Vdet

100pF

100pF

100pF

RF

Input

5 mil Thick

Alumina

50Ω

2 mil Gap

Gate Supply Vg

100pF

10,000pF

RF

Output

L< 0.015”

(4 Places)

Note:

Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.

Recommended Procedure for Biasing and Operation

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE

DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to

properly test the amplifier:

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the ground of

the chip carrier. Slowly apply negative gate bias

supply voltage of -1.5V to Vg.

Step 3: Slowly apply positive drain bias supply voltage of

+4V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq = 96mA.

Step 5: After the bias condition is established, the RF

input signal may now be applied at the

appropriate frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

©2004 Fairchild Semiconductor Corporation

RMWB12001 Rev. C

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