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SDB10S30(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Lista de partido
SDB10S30
(Rev.:2001)
Infineon
Infineon Technologies Infineon
SDB10S30 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Thermal Characteristics
Parameter
Preliminary data
Symbol
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm2 cooling area 1)
RthJC
RthJA
SDP10S30, SDB10S30
SDT10S30
Values
Unit
min. typ. max.
-
-
2.3 K/W
-
-
62
-
35
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=10A, Tj=25°C
IF=10A, Tj=150°C
VF
-
1.5 1.7
-
1.5 1.9
Reverse current
VR=300V, Tj=25°C
VR=300V, Tj=150°C
IR
-
15 200
-
20 1000
Unit
V
µA
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-12-04

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