SDB10S30(2001) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
SDB10S30 Datasheet PDF : 9 Pages
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Preliminary data
SDP10S30, SDB10S30
SDT10S30
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
10 2
µA
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SDP10S30
K/W
10 1
10 0
10 0
10 -1
10 -2
10 -3
150°C
125°C
100°C
25°C
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
50
100
150
200
V
300
VR
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
450
pF
350
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
8 Typ. C stored energy
EC=f(VR)
s 10 0
tp
2.5
µJ
300
1.5
250
200
1
150
100
0.5
50
010 0
10 1
10 2
V
10 3
VR
00
50
100 150 200
V
300
VR
Page 5
2001-12-04
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