IN74HC365 Ver la hoja de datos (PDF) - Integral Corp.

Número de pieza

componentes Descripción

Lista de partido

IN74HC365

HEX 3-STATE NONINVERTING BUFFER WITH COMMON ENABLES High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HC365

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)

VCC Guaranteed Limit

Symbol

Parameter

Test Conditions

V 25 °C ≤85 ≤125 Unit

to

°C °C

-55°C

VIH Minimum High- VOUT= VCC-0.1 V 2.0 1.5 1.5 1.5 V

Level

Input IOUT≤ 20 µA

4.5 3.15 3.15 3.15

Voltage

6.0 4.2 4.2 4.2

VIL Maximum Low - VOUT=0.1

Level

Input IOUT ≤ 20 µA

Voltage

V 2.0 0.3 0.3 0.3 V

4.5 0.9 0.9 0.9

6.0 1.2 1.2 1.2

VOH Minimum High- VIN=VIH

Level

Output IOUT ≤ 20 µA

Voltage

2.0 1.9 1.9 1.9 V

4.5 4.4 4.4 4.4

6.0 5.9 5.9 5.9

VIN=VIH

IOUT ≤ 6.0

IOUT ≤ 7.8 mA

mA 4.5

6.0

3.98 3.84 3.7

5.48 5.34 5.2

VOL Maximum Low- VIN=

Level

Output IOUT ≤ 20 µA

Voltage

VIL 2.0 0.1 0.1 0.1 V

4.5 0.1 0.1 0.1

6.0 0.1 0.1 0.1

VIN=

IOUT ≤ 6.0

IOUT ≤ 7.8 mA

VIL

mA 4.5

6.0

0.26 0.33 0.4

0.26 0.33 0.4

IIN

Maximum Input VIN=VCC or GND

Leakage Current

6.0 ±0.1 ±1.0 ±1.0 µA

IOZ Maximum Three- Output in High- 6.0 ±0.5 ±5.0 ±10 µA

State Leakage Impedance

State

Current

VIN= VIL or VIH

VOUT=VCC or GND

ICC Maximum

VIN=VCC or GND 6.0 8.0 80 160 µA

Quiescent Supply IOUT=0µA

Current

(per Package)

3

Share Link: