IN74HC365 Ver la hoja de datos (PDF) - Integral Corp.

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IN74HC365

HEX 3-STATE NONINVERTING BUFFER WITH COMMON ENABLES High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HC365

AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns)

VCC

Guaranteed Limit

Symbol

Parameter

V 25 °C ≤85°C ≤125 Unit

to

°C

-55°C

tPLH, Maximum Propagation Delay, Input A to 2.0 120 150 180 ns

tPHL Output Y (Figures 1 and 3)

4.5 24

30

36

6.0 20

26

31

tPLZ, Maximum Propagation Delay ,Output 2.0 220 275 330 ns

tPHZ Enable

to 4.5 44

55

66

Output Y (Figures 2 and 4)

6.0 37

47

56

tPZL, Maximum Propagation Delay ,Output 2.0 220 275 330 ns

tPZH Enable

to 4.5 44

55

66

Output Y (Figures 2 and 4)

6.0 37

47

56

tTLH, tTHL Maximum Output Transition Time, Any 2.0 60

75

90 ns

Output

4.5 12

15

18

(Figures 1 and 3)

6.0 10

13

15

CIN Maximum Input Capacitance

- 10

10

10 pF

COUT Maximum

Three-State

Output - 15

15

15 pF

Capacitance (Output in High-Impedance

State)

Power Dissipation Capacitance (Per Typical @25°C,VCC=5.0 V

Buffer)

CPD Used to determine the no-load dynamic

40

pF

power

consumption:

PD=CPDVCC2f+ICCVCC

Figure 1. Switching Waveforms

Figure 2. Switching Waveforms

4

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