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IRF5EA1310

HEXFET® POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

PD-93977

HEXFET® POWER MOSFET

SURFACE MOUNT (LCC-28)

IRF5EA1310

100V, N-CHANNEL

Product Summary

Part Number

BVDSS

IRF5EA1310

100V

RDS(on)

ID

0.036Ω 23A

Fifth Generation HEXFET® power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

LCC-28

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current Œ

Max. Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

EAR

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current Œ

Repetitive Avalanche Energy Œ

Peak Diode Recovery dv/dt Ž

TJ

TSTG

Operating Junction

Storage Temperature Range

Package Mounting Surface Temperature

Weight

For footnotes refer to the last page

www.irf.com

23

15

92

38

0.3

±20

73

22

3.8

3.6

-55 to 150

300 (for 5 s)

0.89

Units

A

W

W/°C

V

mJ

A

mJ

V/ns

oC

g

1

1019/00

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