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IRF5EA1310

HEXFET® POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

IRF5EA1310

4000

3500

3000

2500

2000

1500

1000

500

0

1

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 22A

16

VDS = 80V

VDS = 50V

VDS = 20V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

20 40 60 80 100 120 140

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 150° C

10

TJ = 25° C

1

0.1

0.2

VGS = 0 V

0.7

1.2

1.7

2.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA

LIMITED BY RDS(on)

10

1ms

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

1

10

10ms

100

VDS , Drain-toSource Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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