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IRF5NJ3315

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

PD-94287B

HEXFET® POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRF5NJ3315

150V, N-CHANNEL

Product Summary

Part Number

IRF5NJ3315

BVDSS

150V

RDS(on)

0.08Ω

ID

20A

Fifth Generation HEXFET® power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

SMD-0.5

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current À

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

EAR

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

TJ

TSTG

Operating Junction

Storage Temperature Range

Package Mounting Surface Temp

Weight

For footnotes refer to the last page

www.irf.com

20

12

80

75

0.6

±20

78

12

7.5

3.0

-55 to 150

300 (for 5s)

1.0 (Typical)

Units

A

W

W/°C

V

mJ

A

mJ

V/ns

°C

g

1

02/18/10

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