IRF5NJ3315 Ver la hoja de datos (PDF) - International Rectifier

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IRF5NJ3315

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

IRF5NJ3315

2500

2000

1500

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

500

Coss

Crss

0

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 12A

16

VDS = 120V

VDS = 75V

VDS = 30V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

20

40

60

80

100

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

TJ = 150°C

10

TJ = 25°C

1

0.1

0.4

VGS = 0 V

0.8

1.2

1.6

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10

100µ s

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

1

10

1ms

10ms

DC

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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