IRF7809AV Ver la hoja de datos (PDF) - International Rectifier

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IRF7809AV

HEXFET Power MOSFET. VDS = 30V, RDS(on) = 7.0mΩ

International Rectifier 

IRF7809AV

6000

5000

4000

3000

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

2000

1000

0

1

Coss

Crss

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10 ID = 15A

8

VDS = 20V

6

4

2

0

0 10 20 30 40 50 60 70

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 150° C

10

TJ = 25° C

1

0.1

0.2

VGS = 0 V

0.6

1.0

1.4

1.8

2.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

100us

10

1ms

TA = 25°C

TJ = 150°C

Single Pulse

1

0.1

1

10ms

10

100

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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