IRF7809AV Ver la hoja de datos (PDF) - International Rectifier

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IRF7809AV

HEXFET Power MOSFET. VDS = 30V, RDS(on) = 7.0mΩ

International Rectifier 

IRF7809AV

0.008

0.007

VGS = 4.5V

0.012

0.010

0.006

VGS = 10V

0.008

ID = 15A

0.005

0

20 40 60 80 100 120

ID , Drain Current (A)

0.006

2.5

3.0

3.5

4.0

4.5

VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 13. On-Resistance Vs. Gate Voltage

500

ID

TOP

6.7A

9.5A

400

BOTTOM 15A

300

200

V(BR)DSS

tp

IAS

VDS

L

RG

20V

tp

D.U.T

IAS

0.01Ω

15V

DRIVER

+

- VDD

A

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature( °C)

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

6

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

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