IRF5210 Ver la hoja de datos (PDF) - International Rectifier

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IRF5210

HEXFET®Power MOSFET

International Rectifier 

1000

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

1000

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

IRF5210

10

-4.5V

40µs PULSE W IDTH

1

Tc = 25°C

A

0.1

1

10

100

-VD S , D rain-to-S ourc e V oltage (V )

Fig 1. Typical Output Characteristics

10

-4 .5 V

40µs PULSE W IDTH

1

TC = 175°C

A

0.1

1

10

100

-VD S , D rain-to-S ource V oltage (V )

Fig 2. Typical Output Characteristics

1000

100

TJ = 25 °C

TJ = 175°C

10

VDS = -50V

40µs PULSE W ID TH

1

4

5

6

7

8

9

10 A

-VGS , G ate-to -S ou rce V oltage (V )

Fig 3. Typical Transfer Characteristics

3.0

ID = -35A

2.5

2.0

1.5

1.0

0.5

0.0

VG S = -10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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