IRF5210 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF5210 Datasheet PDF : 8 Pages
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IRF5210
6000
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH OR TE D
5000
C rss = C gd
Ciss C oss = C ds + C gd
4000
C oss
3000
Crss
2000
1000
0
A
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I D = -21A
16
12
VDS = -80V
VDS = -50V
VDS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 1 75 °C
TJ = 25°C
10
1
VGS = 0V A
0.4
0.8
1.2
1.6
2.0
2.4
-VSD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
100
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10m s
1
10
100
-VDS , D rain-to-S ourc e V oltage (V )
A
1000
Fig 8. Maximum Safe Operating Area
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