IRF5806 Ver la hoja de datos (PDF) - International Rectifier
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IRF5806 Datasheet PDF : 9 Pages
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IRF5806
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.011 –––
––– 47.1 86
67.5 147
V/°C
mΩ
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -3.0A
VGS(th)
Gate Threshold Voltage
-0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.4 ––– ––– S VDS = -10V, ID = -4.0A
IDSS
Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 8.3 11.4
ID = -4.0A
Qgs
Gate-to-Source Charge
––– 1.2 ––– nC VDS = -16V
Qgd
Gate-to-Drain ("Miller") Charge
––– 2.6 –––
VGS = -4.5V
td(on)
Turn-On Delay Time
––– 6.2 9.3
VDD = -10V, VGS = -4.5V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 27 41 ns ID = -1.0A
––– 94 140
RG = 6.0Ω
––– 126 190
RD = 10Ω
Ciss
Input Capacitance
––– 594 –––
VGS = 0V
Coss
Output Capacitance
––– 114 ––– pF VDS = -15V
Crss
Reverse Transfer Capacitance
––– 87 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
-2.0
showing the
A integral reverse
G
-16.5
p-n junction diode.
S
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
––– 116 174 ns TJ = 25°C, IF = -2.0A
––– 90 135 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square Copper board, t ≤ 10sec.
2
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