IRF5806 Ver la hoja de datos (PDF) - International Rectifier

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IRF5806

HEXFET® Power MOSFET

International Rectifier 

IRF5806

5.0

4.0

3.0

2.0

1.0

0.0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

VGS

RG

RD

D.U.T.

-

+ VDD

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VGS

10%

td(on) tr

td(off) tf

90%

VDS

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

PDM

t1

t2

0.1

0.00001

0.0001

Notes:

1. Duty factor D = t1 / t 2

2. Peak TJ = P DM x ZthJA + TA

0.001

0.01

0.1

1

10

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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