IRF5805 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRF5805

HEXFET® Power MOSFET

International Rectifier 

IRF5805

100

VGS

TOP

-10.0V

-4.5V

-3.7V

-3.5V

10

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

1

0.1

0.01

0.1

-2.5V

20µs PULSE WIDTH

Tj = 25°C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP

-10.0V

-4.5V

-3.7V

-3.5V

10

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

1

-2.5V

0.1

0.01

0.1

20µs PULSE WIDTH

Tj = 150°C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

10

TJ = 150° C

1

TJ = 25° C

0.1

2.0

VDS = -15V

20µs PULSE WIDTH

3.0

4.0

5.0

6.0

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.0

ID = -3.8A

1.5

1.0

0.5

VGS = -10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

Share Link: