IRF5805 Ver la hoja de datos (PDF) - International Rectifier

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IRF5805

HEXFET® Power MOSFET

International Rectifier 

IRF5805

0.500

0.450

0.400

0.350

0.300

0.250

0.200

0.150

ID = -3.8A

0.100

0.050

2.0

3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

-VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.400

0.300

0.200

VGS = -4.5V

0.100

VGS = -10V

0.000

0

5

10

15

20

-ID , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.

Drain Current

QGS

VG

QG

QGD

Charge

Fig 14a. Basic Gate Charge Waveform

6

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 14b. Gate Charge Test Circuit

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