IRF7451 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF7451 Datasheet PDF : 8 Pages
| |||
IRF7451
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.09 Ω VGS = 10V, ID = 2.2A
3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
3.5 ––– –––
Qg
Total Gate Charge
––– 28 41
Qgs
Gate-to-Source Charge
––– 6.8 10
Qgd
Gate-to-Drain ("Miller") Charge
––– 13 20
td(on)
Turn-On Delay Time
––– 10 –––
tr
Rise Time
––– 4.2 –––
td(off)
Turn-Off Delay Time
––– 17 –––
tf
Fall Time
––– 15 –––
Ciss
Input Capacitance
––– 990 –––
Coss
Output Capacitance
––– 220 –––
Crss
Reverse Transfer Capacitance
––– 42 –––
Coss
Output Capacitance
––– 1260 –––
Coss
Output Capacitance
––– 100 –––
Coss eff. Effective Output Capacitance
––– 180 –––
Units
S
nC
ns
pF
Conditions
VDS = 25V, ID = 2.2A
ID = 2.2A
VDS = 120V
VGS = 10V
VDD = 75V
ID = 2.2A
RG = 6.5Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Typ.
–––
–––
Max.
210
3.6
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.3
A showing the
integral reverse
G
––– ––– 29
p-n junction diode.
S
––– ––– 1.3
––– 76 110
––– 270 400
V TJ = 25°C, IS = 2.2A, VGS = 0V
ns TJ = 25°C, IF = 2.2A
nC di/dt = 100A/µs
www.irf.com
Share Link: 