IRF7451 Ver la hoja de datos (PDF) - International Rectifier

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IRF7451

HEXFET® Power MOSFET

International Rectifier 

IRF7451

0.085

0.083

0.080

0.078

VGS = 10V

0.120

0.105

0.090

ID = 2.2A

0.075

0.073

0.075

0.070

0 2 4 6 8 10 12 14 16

ID , Drain Current ( A )

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

0.060

6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

500

ID

TOP

1.6A

2.9A

400

BOTTOM 3.6A

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

V (B R )D SS

tp

IAS

VDS

L

RG

20V

tp

D.U .T

IA S

0.0 1Ω

15V

DRIVER

+

- VD D

A

300

200

100

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (° C)

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

6

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

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