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IRF3709L

HEXFET® Power MOSFET

International Rectifier 

IRF3709/3709S/3709L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

30

–––

–––

–––

1.0

–––

–––

–––

–––

–––

0.029

6.4

7.4

–––

–––

–––

–––

–––

–––

–––

9.0

10.5

3.0

20

100

200

-200

V

V/°C

mΩ

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 15A ƒ

VGS = 4.5V, ID = 12A ƒ

VDS = VGS, ID = 250µA

VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

Qg

Total Gate Charge

53 ––– –––

––– 27 41

S VDS = 15V, ID = 30A

ID = 15A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– 6.7 ––– nC VDS = 16V

––– 9.7 –––

VGS = 5.0V ƒ

Qoss

td(on)

Output Gate Charge

Turn-On Delay Time

––– 22 –––

––– 11 –––

VGS = 0V, VDS = 10V

VDD = 15V

tr

td(off)

tf

Ciss

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

––– 171 ––– ns ID = 30A

––– 21 –––

RG = 1.8Ω

––– 9.2 –––

VGS = 4.5V ƒ

––– 2672 –––

VGS = 0V

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

––– 1064 ––– pF VDS = 16V

––– 109 –––

ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

382

30

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ. Max. Units

––– 90†

A

––– 360

0.88 1.3 V

0.82 –––

48 72 ns

46 69 nC

48 72 ns

52 78 nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 30A, VGS = 0V ƒ

TJ = 125°C, IS = 30A, VGS = 0V ƒ

TJ = 25°C, IF = 30A, VR=15V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 30A, VR=15V

di/dt = 100A/µs ƒ

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