IRF3709L Ver la hoja de datos (PDF) - International Rectifier

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IRF3709L

HEXFET® Power MOSFET

International Rectifier 

IRF3709/3709S/3709L

15V

VDS

L

D RIVER

RG

20V

tp

D.U .T

IA S

0 .0 1 Ω

+

- VDD

A

Fig 12a. Unclamped Inductive Test Circuit

1200

1000

800

600

400

ID

TOP

13A

19A

BOTTOM 30A

V(BR)DSS

tp

200

0

25

50

75

100

125

150

Starting TJ , Junction Temperature(° C)

IAS

Fig 12b. Unclamped Inductive Waveforms

QG

VGS

QGS

QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

6

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