IRFBC40AS Ver la hoja de datos (PDF) - International Rectifier

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IRFBC40AS

HEXFET® Power MOSFET

International Rectifier 

IRFBC40AS

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1

4.5V

0.1

0.01

0.1

20µs PULSE WIDTH

TJJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics,

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

1

0.1

1

20µs PULSE WIDTH

TJJ = 150 °C

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics,

100

TJ = 150° C

10

TJ = 25° C

1

0.1

4.0

V DS= 50V

20µs PULSE WIDTH

5.0

6.0

7.0

8.0

9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.0 ID = 5.9A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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