IRCZ34 Ver la hoja de datos (PDF) - International Rectifier

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IRCZ34

HEXFET® Power MOSFET

International Rectifier 

IRCZ34

TC, Case Temperature (°C)

Fig. 9 Maximum Drain Current vs. Case

Temperature

Starting TJ, Junction Temperature (°C)

Fig. 12c Maximum Avalanche Energy

vs. Drain Current

t1, Rectiangular Pulse Duration (seconds)

Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-11

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