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IRFV260

N-CHANNEL HEXFET® TRANSISTOR

International Rectifier 

IRFV260 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

BVDSS

Drain-to-Source Breakdown Voltage 200

∆BVDSS/∆TJ Temp. Coefficient of Breakdown Voltage —

RDS(on) Static Drain-to-Source

—

On-State Resistance

—

VGS(th)

Gate Threshold Voltage

2.0

gfs

Forward Transconductance

22

IDSS

Zero Gate Voltage Drain Current

—

—

IGSS

Gate-to-Source Leakage Forward

—

IGSS

Gate-to-Source Leakage Reverse

—

Qg

Total Gate Charge

—

Qgs

Gate-to-Source Charge

—

Qgd

Gate-to-Drain (“Miller”) Charge

—

td(on)

Turn-On Delay Time

—

tr

Rise Time

—

td(off)

Turn-Off Delay Time

—

tf

Fall Time

—

LD

Internal Drain Inductance

—

Typ. Max. Units

Test Conditions

—— V

VGS = 0V, ID = 1.0 mA

0.24

—

—

—

—

—

—

—

—

—

—

—

— V/°C

0.060

0.068 Ω

4.0 V

— S( )

25 µA

250

100 nA

-100

230

40 nC

110

Reference to 25°C, ID = 1.0 mA

VGS = 10V, ID =29A „

VGS = 10V, ID = 45A

VDS = VGS, ID = 250µA

VDS ≥ 15V, IDS = 29A „

VDS=0.8 x Max Rating,VGS=0V

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS =10V, ID = 45A

VDS = Max. Rating x 0.5

— 29

— 120 ns

— 110

VDD = 100V, ID =45A,

RG = 2.35Ω, VGS =10V

— 92

8.7 —

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

LS

Internal Source Inductance

—

8.7 —

nH Measuredfromthe

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

— 5100 —

— 1100 — pF

— 280 —

VGS = 0V, VDS = 25V

f = 1.0 MHz

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