IRFV260 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
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IRFV260 Datasheet PDF : 4 Pages
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IRFV260 Device
Source-Drain Diode Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
Min. Typ. Max. Units
— — 45*
— — 180 A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
ton Forward Turn-On Time
— — 1.8 V
Tj = 25°C, IS = 45A, VGS = 0V
— — 420 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
— — 4.9 µC
VDD ≤ 50V
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min. Typ. Max. Units Test Conditions
— — 0.42
— — 30 K/W
typical socket mount
— 0.21 —
mounting surface flat, smooth
Repetitive Rating; Pulse width limited by
maximum junction temperature.
@ VDD = 50V, Star ting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = 45A, VGS = 10V, 25 ≤ RG ≤ 200Ω
ISD ≤ 45A, di/dt ≤ 130 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
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