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P4C116 Datasheet PDF : 14 Pages
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P4C116/P4C116L
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC
Power Supply Pin with
Respect to GND
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA
Operating Temperature
Value Unit
–0.5 to +7 V
–0.5 to
VCC +0.5
V
–55 to +125 °C
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG
Storage Temperature
PT
Power Dissipation
IOUT
DC Output Current
Value Unit
–55 to +125 °C
–65 to +150 °C
1.0
W
50
mA
RECOMMENDED OPERATING CONDITIONS
Grade(2)
Commercial
Military
Ambient Temp
0°C to 70°C
-55°C to +125°C
Gnd Vcc
0V 5.0V ±10%
0V 5.0V ±10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT= 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
P4C116
Min Max
P4C116L
Min
Max
Unit
VIH Input High Voltage
VIL Input Low Voltage
VHC CMOS Input High Voltage
VLC CMOS Input Low Voltage
VCD Input Clamp Diode Voltage VCC = Min., IIN = –18 mA
VOL
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
2.2 VCC +0.5 2.2 VCC +0.5 V
–0.5(3)
0.8
–0.5(3)
0.8
V
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5 V
–0.5(3)
0.2
–0.5(3)
0.2
V
–1.2
–1.2 V
0.4
0.4
V
VOH
Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
2.4
2.4
V
ILI Input Leakage Current
VCC = Max.
VIN = GND to VCC
Mil. –10
+10
–5
+5 µA
Com’l. –5
+5
n/a
n/a
ILO Output Leakage Current
VCC = Max., CE = VIH,
VOUT = GND to VCC
Mil.
Com’l.
–10
–5
+10
+5
–5
n/a
+5 µA
n/a
ISB
Standby Power Supply
Current (TTL Input Levels)
CE ≥ VIH,
VCC= Max,
Mil. ___
30
___
20 mA
Ind./Com’l. ___
20
___
n/a
f = Max., Outputs Open
Standby Power Supply
ISB1 Current
(CMOS Input Levels)
CE ≥ VHC,
VCC= Max,
Mil. ___
Ind./Com’l. ___
f = 0, Outputs Open
15
10
VIN ≤ VLC or VIN ≥ VHC
___
1
mA
___
n/a
n/a = Not Applicable
Document # SRAM110 REV A
Page 2 of 14
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