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STKM2000 Datasheet PDF : 10 Pages
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STKM2000 SERIES
STKM2000 ARCHITECTURE
Technology
The STKM2000 Series developed by
SGS-THOMSON Microelectronics uses an
advanced BICMOS silicon gate process with dual
polysilicon layers and dual metal layers. This
process is optimized to achieve high performance
in digital CMOS applications. Depending on the
operating supply voltage (10V, or 5V), the CMOS
process behaves as an N-WELL technology
(respectively with 2 µ gate length or 1.8 µ gate
length) with operating speeds up to 30MHz.
Thanks to the two metal layers, the digital part of
the circuit can reach high gate density with low
parasitic capacitances.
For analog functions, the STKM2000 series takes
advantage of the bipolar structure:
q very high speed NPN transistor : fT = 6 GHz
q very high speed vertical PNP : fT = 2.5 GHz
This allows high gain - bandwith operational
amplifier (50 MHz), low noise input amplifier, short
propagation delay comparator, ...
With the same BICMOS process, the analog
CMOS performance come from the high density
CMOS structure with a double poly layer for
accurate capacitors, low consumption CMOS
amplifier (30 µA), CMOS switches, high accuracy
switched capacitor filters (up to 100 kHz for center
frequency).
STKM2000 cell concepts
SGS-THOMSON Microelectronics has
predesigned and precharacterized cells which are
selected, placed and interconnected on the chip to
implement digital and analog cells having different
height and supply voltages. In addition some
macrocells are designed as fixed blocks, so called
“hard blocks” : filters, A/D and D/A converters; some
hard blocks are automatically generated and
parametrized from a compiler: S.C. filters, PLA,
RAM, ROM...
STKM2000 chip topology
The chip is optimized versus the cell complexity, in
a row based structure with different heights.
Peripheral cells surround the internal active chip
area to interface with its external environment.
Despite the row based architecture, “hard blocks”
can be implemented with efficient floor planning
organization.
STKM2000 Cell libraries
SGS-THOMSON Microelectronics introduces the
“programmable” library; instead of working with a
finite number of cells of the library, the designer has
now access to an infinite number of functions.
Defining only some properties, the designer is able
to create himself the cells needed for his
application. For example, the following electrical
parameters are accessible and adjustable:
q gain-bandwith product
q phase margins, frequency compensation
q output buffer current
q biasing currents
q resistor, capacitor fields
q current, source or sink
q adjustable Ron switch resistor
q supply voltage assignment
The analog library is operating in a large voltage
range: 3V to 10V.
The basic analog library contains:
q 60 analog CMOS functions
q 25 analog BIPOLAR functions
From single transitor to 12 bits A to D converter
(with autocalibration), each setup becomes
possible.
The digital CMOS library uses the same flexibility
with a complete set of basic digital functions
(NAND, NOR, Flip-Flop, ...) and some cell
generators:
q register, counter, logic comparator, ...
More than 60 digital cells are available.
2/10
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