IKP10N60T(2007) Ver la hoja de datos (PDF) - Infineon Technologies

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Lista de partido

IKP10N60T
(Rev.:2007)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP10N60T

p

14A

TJ=175°C

12A

10A

8A

TJ=25°C

6A

4A

2A

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 10A,

Dynamic test circuit in Figure E)

-700A/µs

TJ=25°C

-600A/µs

-500A/µs

-400A/µs

-300A/µs

TJ=175°C

-200A/µs

-100A/µs

0A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, IF=10A,

Dynamic test circuit in Figure E)

30A

20A

TJ=25°C

175°C

10A

2,0V

1,5V

1,0V

0,5V

IF=20A

10A

5A

0A

0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

0,0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

Power Semiconductors

10

Rev. 2.3 Sep. 07

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