IKP10N60T(2007) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
IKP10N60T
(Rev.:2007)
(Rev.:2007)
Infineon Technologies
IKP10N60T Datasheet PDF : 13 Pages
| |||
TrenchStop® Series
IKP10N60T
p
100K/W
D=0.5
1 0 -1K /W
0.2
0.1
0.05
R,(K/W)
0.2911
0.4092
0.5008
0.1529
R1
τ, (s)
6.53*10-2
8.33*10-3
7.37*10-4
7.63*10-5
R2
0.02
0.01
C1=τ1/R1 C2=τ2/R2
single pulse
100K/W D=0.5
10-1K/W
0.2
R,(K/W) τ, (s)
0.3169
4.629*10-2 6
0.1
0.4734
0.6662
7.07*10-3
1.068*10-3
0.4398
1.253*10-4
0.05 R1
R2
0.02
0.01
C1=τ1/R1 C2=τ2/R2
single pulse
1 0 -2K /W
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
10-2K/W
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
300ns
250ns
200ns
TJ=175°C
150ns
100ns
50ns
TJ=25°C
0ns
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=10A,
Dynamic test circuit in Figure E)
0,8µC
0,7µC
TJ=175°C
0,6µC
0,5µC
0,4µC
0,3µC
TJ=25°C
0,2µC
0,1µC
0,0µC
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.3 Sep. 07
Share Link: