IRG4BC10SPBF Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SPBF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

IRG4BC10SPbF

20

16

12

Square wave:

60% of rated

voltage

8

4

0

0.1

Ideal diodes

For both:

Duty cycle: 50%

TJ= 125°C

Tsink= 90°C

Gate drive as specified

Power Dissipation = 9.2 W

Triangular wave:

Clamp voltage:

80% of rated

A

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

TJ = 25 °C

10

TJ = 150 °C

VGE = 15V

20µs PULSE WIDTH

1

0.8

1.2

1.6

2.0

2.4

2.8

3.2

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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10 TJ = 150 °C

TJ = 25 °C

VCC = 50V

5µss PPUULLSSEEWWIDIDTHTH

1

6

8

10

12

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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