STI14NM50N(2014) Ver la hoja de datos (PDF) - STMicroelectronics

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STI14NM50N
(Rev.:2014)

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages

STMicroelectronics 

STF14NM50N, STI14NM50N, STP14NM50N

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 12 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V

-

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

-

(see Figure 20)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

12 A

48 A

1.6 V

252

ns

2.8

µC

22

A

300

ns

3.3

µC

22.2

A

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