STI14NM50N(2014) Ver la hoja de datos (PDF) - STMicroelectronics

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Lista de partido

STI14NM50N
(Rev.:2014)

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages

STMicroelectronics 

STF14NM50N, STI14NM50N, STP14NM50N

Electrical characteristics

Figure 8. Normalized V(BR)DSS vs temperature

V(BR)DSS

(norm)

1.10

ID=1mA

AM09028v1

1.08

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0 25 50 75 100 TJ(°C)

Figure 9. Static drain-source on-resistance

RDS(on)

(Ohm)

0.300

0.295

VGS=10V

AM07205v1

0.290

0.285

0.280

0.275

0.270

0.265

0

2 4 6 8 10 12 ID(A)

Figure 10. Capacitance variations

Figure 11. Gate charge vs gate-source voltage

C

(pF)

1000

AM07206v1

Ciss

VGS

(V)

12

VDS

10

VDD=400V

ID=12A

AM07204v1

VDS

(V)

400

350

300

8

250

100

6

200

Coss

150

10

4

100

Crss

2

50

1

0.1

1

10

100 VDS(V)

0

0

0 5 10 15 20 25 30 Qg(nC)

Figure 12. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.10

ID=250µA

AM07208v1

Figure 13. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.1

ID=6A

AM07209v1

1.00

0.90

1.7

VGS=10 V

1.3

0.80

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.9

0.5

-50 -25 0 25 50 75 100 TJ(°C)

DocID16832 Rev 7

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