VNP35NV04-E Ver la hoja de datos (PDF) - STMicroelectronics

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VNP35NV04-E

OMNIFET II: fully autoprotected Power MOSFET

STMicroelectronics 

VNB35NV04-E, VNP35NV04-E, VNV35NV04-E

Electrical specification

2.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

Value

Unit

PowerSO-10 D2PAK TO-220

Rthj-case Thermal resistance junction-case (max)

1

1

1 °C/W

Rthj-amb Thermal resistance junction-ambient (max)

50(1)

50(1)

50 °C/W

1. When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 mm thick) connected

to all DRAIN pins.

2.3

Electrical characteristics

-40°C < Tj < 150°C, unless otherwise specified.

Symbol

Parameter

Table 4. Off

Test conditions

VCLAMP

Drain-source clamp

voltage

VCLTH

Drain-source clamp

threshold voltage

VINTH

IISS

Input threshold voltage

Supply current from input

pin

VINCL

Input-source clamp

voltage

IDSS

Zero input voltage drain

current (VIN = 0 V)

VIN = 0 V; ID = 15 A

VIN = 0 V; ID = 2 mA

VDS = VIN; ID = 1 mA

VDS = 0 V; VIN = 5 V

IIN = 1 mA

IIN = -1 mA

VDS = 13 V; VIN = 0 V;

Tj = 25 °C

VDS = 25 V; VIN = 0 V

Min Typ Max Unit

40 45 55 V

36

V

0.5

2.5 V

100 150 μA

6 6.8 8

V

-1.0

-0.3 V

30 μA

75 μA

Table 5. On

Symbol

Parameter

Test conditions

Max

PowerSO-10

D2PAK

TO-220

Unit

RDS(on)

Static drain-source

on resistance

VIN = 5 V; ID = 15 A; Tj = 25 °C

VIN = 5 V; ID = 15 A; Tj = 150 °C

10

20

13

mΩ

24

mΩ

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