VNP35NV04-E Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Lista de partido
VNP35NV04-E Datasheet PDF : 27 Pages
| |||
Electrical specification
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
Tj = 25°C, unless otherwise specified.
Table 6. Dynamic
Symbol
Parameter
Test conditions
gfs(1)
Forward
transconductance
VDD = 13 V; ID = 15 A
COSS Output capacitance VDS = 13 V; f = 1 MHz; VIN = 0 V
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
Min Typ Max Unit
— 35 — S
— 1300 — pF
Symbol
Parameter
Table 7. Switching
Test conditions
Min
td(on) Turn-on delay time
—
tr
Rise time
VDD = 15 V; ID = 15 A;
Vgen = 5 V;
—
td(off) Turn-off delay time
Rgen = RIN MIN = 4.7 Ω (see
Figure 3)
—
tf
Fall time
—
td(on) Turn-on delay time
—
tr
Rise time
VDD = 15 V; ID = 15 A;
—
Vgen = 5 V; Rgen = 2.2 KΩ (see
td(off) Turn-off delay time
Figure 3)
—
tf
Fall time
—
(di/dt)on Turn-on current slope
VDD = 15 V; ID = 15 A;Vgen = 5 V;
Rgen = RIN MIN = 4.7 Ω
—
Qi Total input charge
VDD = 12 V; ID = 15 A; VIN = 5 V;
Igen = 2.13 mA (see Figure 8)
—
Typ Max Unit
150 500 ns
840 2500 ns
980 3000 ns
600 1500 ns
4
12 μs
27 100 μs
34 120 μs
31 110 μs
18
A/μs
118
nC
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
VSD(1)
trr
Qrr
IRRM
Forward on voltage ISD = 15 A; VIN = 0 V
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD = 15 A; dI/dt = 100 A/μs;
VDD = 30 V; L = 200 μH (see
Figure 4)
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
Min Typ Max Unit
— 0.8 —
V
— 400 — ns
— 1.4 — μC
—
7
—
A
Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Ilim Drain current limit
VIN = 6 V; VDS = 13 V
tdlim
Step response current
limit
VIN = 6 V; VDS = 13 V
30 45 60 A
50
μs
8/27
DocID023550 Rev 5
Share Link: 