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IRG4PH30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PH30KD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

∆V(BR)CES/∆TJ

VCE(on)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

VFM

IGES

Collector-to-Emitter Breakdown VoltageS

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance T

Zero Gate Voltage Collector Current

Diode Forward Voltage Drop

Gate-to-Emitter Leakage Current

1200

—

—

—

—

3.0

—

4.3

—

—

—

—

—

—

0.19

3.10

3.90

3.01

—

-12

6.5

—

—

3.4

3.3

—

—V

— V/°C

4.2

—V

—

6.0

— mV/°C

—S

250 µA

3500

3.8 V

3.7

±100 nA

VGE = 0V, IC = 250µA

VGE = 0V, IC = 1.0mA

IC = 10A

VGE = 15V

IC = 20A

See Fig. 2, 5

IC = 10A, TJ = 150°C

VCE = VGE, IC = 250µA

VCE = VGE, IC = 250µA

VCE = 100V, IC = 10A

VGE = 0V, VCE = 1200V

VGE = 0V, VCE = 1200V, TJ = 150°C

IC = 10A

See Fig. 13

IC = 10A, TJ = 150°C

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

tsc

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

trr

Irr

Qrr

di(rec)M/dt

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak Reverse Recovery Current

Diode Reverse Recovery Charge

Diode Peak Rate of Fall of Recovery

During tb

Min.

—

—

—

—

—

—

—

—

—

—

10

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

53

9.0

21

39

84

220

90

0.95

1.15

2.10

—

42

79

540

97

3.5

13

800

60

14

50

72

4.4

5.9

130

250

210

180

Max.

80

14

32

—

—

340

140

—

—

2.6

—

—

—

—

—

—

—

—

—

—

76

110

7.0

8.8

200

380

—

—

Units

nC

ns

mJ

µs

ns

mJ

nH

pF

ns

A

nC

A/µs

Conditions

IC = 10A

VCC = 400V

See Fig.8

VGE = 15V

TJ = 25°C

IC = 10A, VCC = 800V

VGE = 15V, RG = 23Ω

Energy losses include "tail"

and diode reverse recovery

See Fig. 9,10,18

VCC = 720V, TJ = 125°C

VGE = 15V, RG = 5.0Ω

TJ = 150°C, See Fig. 10,11,18

IC = 10A, VCC = 800V

VGE = 15V, RG = 23Ω,

Energy losses include "tail"

and diode reverse recovery

Measured 5mm from package

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

TJ = 25°C See Fig.

TJ = 125°C 14

IF = 10A

TJ = 25°C See Fig.

TJ = 125°C 15

VR = 200V

TJ = 25°C See Fig.

TJ = 125°C

16 di/dt = 200A/µs

TJ = 25°C See Fig.

TJ = 125°C 17

2

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