IRG4PH30KD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PH30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PH30KD

20

15

10

5

0

25

50

75

100

125

150

TC , Case Temperature ( °C)

 5.0

VGE = 15V

80 us PULSE WIDTH

4.5

4.0

 IC = 20A

3.5

 IC = 10A

3.0

 IC = 5A

2.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

10

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

0.01

0.00001

 SINGLE PULSE

(THERMAL RESPONSE)

 PDM

t1

t2

 Notes:

1. Duty factor D = t1 / t2

2. Peak TJ = PDM x Z thJC + TC

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

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