10.0
8.0
6.0
4.0
2.0
0.0
0.1
60% of rated
vo lta ge
Ideal diodes
IRG4BC10SD-S/L
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 °C
10
TJ = 150 °C
VGE = 15V
80µs PULSE WIDTH
1
0.5
1.0
1.5
2.0
2.5
3.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
10 TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PPUULLSSEEWWIDIDTHTH
1
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3