IRG4BC10SD-S Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10SD-S/L

 15 RG = 110000 Ω

T J = 150° C

VCC = 480V

12 VGE = 15V

 100

VGE = 20V

T J = 125 oC

9

10

6

3

SAFE OPERATING AREA

0

1

0

4

8

12

16

20

1

10

100

1000

I C, Collector Current (A)

VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs.

Collector Current

100

Fig. 12 - Turn-Off SOA

10

TJ = 150°C

TJ = 125°C

TJ = 25°C

1

0.1

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Forwardd VVoollttaaggee DDrroopp -- VVFMFM(VV) )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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