IRG4BC10UD Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

7

6

5

4

S qua re wave:

60% of rated

v olta ge

3

I

2

Ideal diodes

1

0

0.1

IRG4BC10UD

For both:

D uty cycle: 50%

TJ = 125°C

Tsink = 90°C

G ate drive as specified

P o w e r D is s ip a tio n = 9.2 W

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

 TJ = 25 oC

 TJ = 150 oC

10

1

0.1

1

 VGE = 15V

20µs PULSE WIDTH

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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100

10

 TJ = 150 oC

 TJ = 25 oC

 VCC = 50V

5µs PULSE WIDTH

1

5 6 7 8 9 10 11 12 13 14

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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