500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400
Coes = Cce + Cgc
300
Cies
200
100
0
1
C oes
C res
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC10UD
20
VCC = 400V
I C = 5.0A
16
12
8
4
0
0
4
8
12
16
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 5.0A
0.25
10 RG = O10h0mΩ
VGE = 15V
VCC = 480V
1
0.1
IC = 10 A
IC = 5.50AA
IC = 2.5 A
0.20
50
60
70
80
90
100
RG R,GG,aGteatReeRseisstiastnacnece(O(Ωh)m)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5