IRG4BC10KD Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

6.0

5.0

4.0

S qua re wave:

3.0

60% of rated

v olta ge

2.0

I

1.0

Ideal diodes

0.0

0.1

IRG4BC10KD

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

G ate drive as specified

P ow e r Dis sip ation = 9.2W

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

 TJ = 25 °C

10

 TJ = 150 °C

 VGE = 15V

20µs PULSE WIDTH

1

1.0

2.0

3.0

4.0

5.0

6.0

7.0

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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10

 TJ = 150 °C

  TJ = 25 °C

VCC = 50V

5µs PULSE WIDTH

1

5

10

15

20

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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