IRG4BC10KD Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10KD

 2.0 RG = 5O0hΩm

TJ = 150° C

VCC = 480V

VGE = 15V

1.5

 100

VGE = 20V

T J = 125 o C

1.0

10

0.5

0.0

0

2

4

6

8

I C , Collector Current (A)

SAFE OPERATING AREA

1

10

1

10

100

1000

VCE, Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

Fig. 12 - Turn-Off SOA

10

TJ = 150°C

TJ = 125°C

TJ = 25°C

1

0.1

0.0 1.0 2.0 3.0 4.0 5.0 6.0

F orward V oltage D rop - V FM(V )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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